https://doi.org/10.15407/spqeo4.04.318
oSemiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 318-322.
PACS: 07.07D, 07.57H, 81.05Y, 84.40D
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
N.S. Boltovets
State Scientific & Research Institute «Orion», 8a Eugene Pottier St., Kyiv, 03057, Ukraine
D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin
Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-61-82; Fax: (380-44) 265-83-42; E-mail: konakova@isp.kiev.ua
V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko
Taras Shevchenko National University, Department of Physics
2, Glushkov Av., Kiev 03127, Ukraine
Abstract. Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n+-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime tp in the n-layer and concentration of structural defects (structural perfection of the n+-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers.
Keywords: defect production, epitaxial layer, dislocation density, radius of curvature, residual stresses.
Paper received 07.08.01; revised manuscript received 27.11.01; accepted for publication 12.12.01.
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