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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 049-051.
Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3-HCl-SnCl2-H2-He system by epitaxial deposition
Lviv Polytechnic National University, 12, Stepan Bandera str., 29013 Lviv, Ukraine
Phone 8 032-258-26-27, 8 032-296-62-08, 8 032-258-21-45; e-mail: gubask@polynet.lviv.ua
Abstract. Investigation results in the preparation technology of perfect GaAs structures
doped with Sn and Bi in the GaAs-Bi-AsCl3-HCl-H2-He system by the isothermal
chloride epitaxy method has been presented. A complex problem has been solved to
obtain planar layers of i-n0
-n-n+ type field-effect transistors with the Schottky barrier.
Preparation of planar active layers of these transistors with electron concentration in the
active layer Ne = 3⋅1017 cm−3
, mobility μ = 4300 cm2
/V·s (T = 20 ºC) has been described.
The growth regime of GaAs doped with Sn and Bi in the scheme with “competing
etching” has been found at the temperature 700 °C in the precipitation zone onset and the
temperature gradient −2ºC/cm. The optimum parameters of structure growth were
presented and discussed. This allowed to create the discrete field-effect transistors with
the Schottky barrier with improved operating characteristics on their basis. The currentvoltage characteristics of individual devices obtained in one technological cycle were
within the range of 20 to 21 mA/V.
Keywords: GaAs field-effect transistor, Schottky barrier, CVC.
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