Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 042-046.

Spin polarization in semimagnetic semiconductor two-barrier spin filters
S.B. Lev, V.I. Sugakov, G.V. Vertsimakha

Institute for Nuclear Research, NAS of Ukraine 47, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. The spin-dependent tunneling of electrons through the CdMgTe-based two- barrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic field, caused by giant Zeeman splitting, allows one to achieve a high level of spin polarization of the current flowing through the spin filter. The current polarization degree depending on different parameters of the system such as the carrier density, concentration of magnetic ions, temperature, and the strength of the external magnetic and electric fields is analyzed.

Keywords: resonant tunneling diode, spin filter, semimagnetic semiconductor.

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