Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 054-059.

Monte Carlo simulation of hot electron effects in compensated GaN semiconductor at moderate electric fields
G.I. Syngayivska, V.V. Korotyeyev

V. Lashkaryov Institute for Semiconductor Physics, Department of Theoretical Physics 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:,

Abstract. The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under low and moderate electric fields. We found that, at low temperatures and low electric fields (a few hundreds of V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case, the mean energy is very slowly dependent on the field. The streaming effect can occur in bulk GaN with low electron concentration (<10 16 cm –3 ) at low temperatures and electric fields of a few kV/cm.

Keywords: Monte Carlo method, hot electrons, electron transport.

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