Monte Carlo simulation of hot electron effects
in compensated GaN semiconductor at moderate electric fields
G.I. Syngayivska, V.V. Korotyeyev

V. Lashkaryov Institute for Semiconductor Physics, Department of Theoretical Physics
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: singg@ukr.net, koroteev@ukr.net

Abstract. The electron distribution function and transport characteristics of hot electrons
in GaN semiconductor are calculated by the Monte Carlo method. We studied the
electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
fields. We found that, at low temperatures and low electric fields (a few hundreds of
V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
the mean energy is very slowly dependent on the field. The streaming effect can occur in
bulk GaN with low electron concentration (<10 16 cm –3 ) at low temperatures and electric
fields of a few kV/cm.

Keywords: Monte Carlo method, hot electrons, electron transport.