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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 375-378.
Influence of ultrasound treatment and dynamic (in-situ) ultrasound
loading on the temperature hysteresis of electrophysical
characteristics in irradiated n-Si–Fz
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. Presented in this paper are experimental results of ultrasound treatment (UST)
and dynamic ultrasound loading (USL) influences on the electric activity of radiation
defects (after -irradiation) in crystals n-Si–Fz. The results are obtained using the Hall
effect method within the temperature range 100–300 K. Peculiarities of US action in the
treatment and loading modes on the temperature hysteresis of electrophysical
characteristics in investigated material (extension and narrowing) were analyzed.
Diffusion and deformation mechanisms responsible for US modification of defect
complexes have been suggested.
Keywords: ultrasound treatment, ultrasound (in-situ) loading, irradiation defects, electric
activity, silicon, Hall effect.
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