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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 424-428.
Approaching to an optimal value of rise time in n-well/p substrate
photodiode by controlling depletion layer width
Dept. of Physics, College of Science,
Al-Mustansiryia University, Baghdad, Iraq
E-mail: emadh67@yahoo.com
Abstract. The relationship between response speed of a silicon n-well/p substrate
photodiode and the depletion layer width has been investigated. Variation of both the
junction capacitance and the series resistance of the photodiode with the depletion layer
width have been analyzed. It is shown that the contribution of the time constant and the
drift time in the rise time within the depletion layer can be decreased to an optimal value
(less than 1ns) just for specific value of the depletion layer width and smaller value of the
diffused junction area.
Keywords: silicon photodiode, n-well/p junction, p-n junction, capacitance junction,
series resistance.
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