Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 427-431.
DOI: https://doi.org/10.15407/spqeo14.04.427

Comparison of optical properties of TiO2 thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques
V.V. Brus1, Z.D. Kovalyuk1, O.A. Parfenyuk2, N.D. Vakhnyak3

1Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Branch, 5, Iryna Vilde str., 58001 Chernivtsi, Ukraine; E-mail: victorbrus@mail.ru
2Yu. Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine;E-mail: o.parfenyuk@chnu.edu.ua
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; E-mail: div47@isp.kiev.ua

Abstract. The envelope method was used to determine optical constants of TiO 2 thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were calculated. Optical properties of the TiO 2 thin films were strongly dependent on the deposition technology. The TiO 2 thin films prepared by magnetron sputtering and electron-beam evaporation methods were established to be indirect band semiconductors with the band gap energies 3.15 and 3.43 eV, respectively.

Keywords: TiO2 , thin film, transmittance, optical properties.

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