Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 432-436.
DOI: https://doi.org/10.15407/spqeo14.04.432

3C-6H transformation in heated cubic silicon carbide 3C-SiC
S.I. Vlaskina1,2, G.N. Mishinova3, V.I. Vlaskin4, V.E. Rodionov2, G.S. Svechnikov2,3

1Yeoju Institute of Technology (Yeoju University), 338 Sejong-ro, Yeoju-eup, Yeoju-gun, Gyeonggi-do, 469-705 Korea
2V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine; E-mail: businkaa@mail.ru
3Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka str., 01033 Kyiv, Ukraine
4Interlink Electronics, Inc. 546, Flynn Road, Camarillo, CA 93012, USA

Abstract. Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing was described. The role of stacking faults in the process of structure transformation was investigated.

Keywords: polytype, silicon carbide, photoluminescence spectrum, 3C-6H transformation.

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