Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 4. P. 376-381.
DOI: https://doi.org/10.15407/spqeo15.04.376


Laser-induced incandescence of silicon surface under 1064-nm excitation
A.V. Kopyshinsky, S.E. Zelensky, E.A. Gomon, S.G. Rozouvan, A.S. Kolesnik

Taras Shevchenko Kyiv National University, Physics Department 64/13, Volodymyrska str., 01601 Kyiv, Ukraine

Abstract. . Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the surface geometry. The anomalous behavior of the parameter of non-linearity of LII is observed with the increase of laser excitation power.

Keywords: laser-induced incandescence, silicon, laser surface processing.

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