Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 4. P. 331-335.
DOI: https://doi.org/10.15407/spqeo16.04.331/

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
V.B. Neimash1, V.M. Poroshin1, P.Ye. Shepeliavyi2, V.O. Yukhymchuk2, V.V. Melnyk3, V.A. Makara3, A.G. Kuzmich3

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prosp. Nauky, 03028 Kyiv, Ukraine
2National Aviation University, Department of Theoretical and Applied Physics, Kyiv, Ukraine
3A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia Phone/fax:+38 (044) 525-61-77; e-mail: nazarov@lab15.kiev.ua

Abstract. The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-nm size has been found in the amorphous matrix alloy formed at the temperature 300 °C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon.

Keywords: nanocrystalline silicon, amorphous silicon, thin films, Si:Sn alloy.

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