Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (4), P. 470-474 (2017).

Trap-assisted conductivity in anodic oxide on InSb
G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine E-mail:

Abstract. The direct current conductivity of anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling and Poole–Frenkel conduction processes. Two defect states were found in the energy gap of the anodic oxide, which can be attributed to bulk traps. The asymmetry in the current-voltage characteristics is analyzed in terms of comparative distribution of the applied bias voltage between the anodic oxide and the depletion region in InSb.

Keywords: InSb, anodic oxide, traps, conductivity.

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