Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka-1000, Bangladesh
*Corresponding author e-mail: sakhawat@du.ac.bd, mobile: +8801716865552

Abstract. An In_0.17Ga_0.83N light emitting diode (LED) structure on ScAlMgO₄ (0001) substrate is modeled for high intensity red emission. The high indium composition (In > 15%) inside the c-plane polar quantum well (QW) for longer wavelength emission degrades the structural and optical properties of LEDs because of induced strain energy and quantum confinement Stark effect. To compensate these effects, it has been demonstrated by simulation that an Al_yGa_1–yN cap layer of 2 nm thick and Al composition of 17% deposited onto QW of 3 nm thick and In composition of 35% will allow to have less defect density and higher intensity red emission at 663 nm than that of In_0.17Ga_0.83N/In_xGa_1–xN LEDs grown on ScAlMgO₄ (0001) substrate. This LED structure has perfect in-plane equilibrium lattice parameter (α_eq = 3.249 Å) and higher logarithmic oscillator strength (Γ = –0.93) values.

Keywords: LED on ScAlMgO₄ (0001) substrate, red emission, equilibrium lattice parameter, oscillator strength, AlGaN cap layer.

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