Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (4), P. 385-393 (2022).
DOI: https://doi.org/10.15407/spqeo25.04.385
Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
Rhythm Optoelectronics Shareholding Company, 58032 Chernivtsi, Ukraine
Abstract. Comparative characterization of phosphorus diffusion from planar sources and liquid-phase diffusion by using PCl3 in technology for manufacturing silicon p-i-n photodiodes was carried out. The quantitative analysis of dislocations formed when using different variants and modes of diffusion has been performed. The influence of dislocation number on the dark current density and responsivity of photodetectors has been studied. A table has been given for estimation of surface resistance with account of colour inherent to phosphorosilicate glass after doping phosphorus into the surface layer.
Keywords: photodiode, phosphorus diffusion, dislocation, dark current, sensitivity.
M.S. Kukurudziak
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