PACS: 71.28, 72.20.J, 78.40.F, 78.66

Characterization of Hg_1-xMn_xTe single crystals and Hg_1-xMn_xTe -based photodiodes

L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo*, Lu Zheng Xiong*

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, №4.-P.31-36.-Engl. Il.: 8. Ref.: 14.

Abstract. The results of electrical, Hall effect and optical absorption studies of Hg1-xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes.

Keywords: narrow-gap semiconductors, electrical and optical properties, photodiodes.

[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 210K]

References

Back to Volume 2 N4

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.