Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 1. P. 075-078.
DOI: https://doi.org/10.15407/spqeo19.01.075

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
S.A. Iliash1, S.V. Kondratenko1, A.S. Yakovliev1, Vas.P. Kunets2, Yu.I. Mazur2, and G.J. Salamo2

1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrs’ka str., 01601 Kyiv, Ukraine E-mail: iliashsviatoslav@gmail.com
2Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Abstract. Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombi-nation process as well as the photoconductivity mechanism was discussed.

Keywords: heterostructure, quantum wire, photoconductivity.

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