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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 139-146.
Current transport mechanisms in metal – high-k
dielectric – silicon structures
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: yurigom@lab15.kiev.ua
Abstract. The mechanism of current transport in several high -dielectric, including rare earth metal oxides (Gd2O3, Nd2O3), ternary compounds (LaLuO3) and rare earth metal silicate (LaSiOx) thin films on silicon was studied using current-voltage (I-V) and conductance-frequency (G-ω) measurements at temperatures 100-300 K. It was shown that the current through the dielectric layer is controlled either by Pool-Frenkel mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance through the localized states near the Fermi level. From the results of measurements, the dynamic dielectric constant k of the material, energy positions and bulk concentrations of traps inside the dielectric layers were determined.
Keywords: high-k dielectric, dielectric-semiconductor interface.
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