https://doi.org/10.15407/spqeo5.03.243
Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 243-246.
PACS: 71.15H, 71.25T, 64.30,
71.45N
Total energy, equation of states and bulk modulus of Si and Ge
Department of Physics, Sardar Patel University,
Vallabh Vidyanagar-388 120, Gujarat, India
Abstract.
A model potential describing electron-ion interaction is presented for
intrinsic semiconductors Si and Ge. The present model potential is single
parametric, continuous in r-space and weaker within core and Coulombic
outside the core. The parameter of the potential is determined using the
equilibrium condition at zero pressure. The total energy, equation of
states and bulk modulus of Si and Ge are calculated using higher order
perturbation theory based on pseudopotential formalism which includes
covalent correction term. Numerical results of total energy and bulk modulus
obtained for the Si and Ge are in good agreements with experimental data
and found superior than other such theoretical findings. The predicted
equation of states of Si and Ge are also excellent.
Keywords: pseudopotential
method, semiconductors, binding energy, equation of states, bulk modulus
Paper received 08.04.02; accepted for publication
10.12.02.
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