Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 267-270 (2020).
https://doi.org/10.15407/spqeo23.03.267
Study of structural, electrical and optical properties
of MoRe0.001Se1.999 single crystal
Department of Physics, University School of Sciences, Gujarat University,
Navarangpura, Ahmedabad 380009, Gujrat, India
E-mail: voraam@gmail.com
Abstract. In the present work, structural, electrical and optical properties of MoRe0.001Se1.999 single crystal grown using the direct vapour transport (DVT) method have been reported. The crystal has been structurally characterized by XRD, determining its lattice parameters a and c and by measuring the X-ray density. The obtained data of the Hall effect and thermoelectric power measurements support that this crystal is of p-type in nature. The direct and indirect band gap measurements were also carried out for this semiconducting material. It has been ascertained that the rhenium doping has a considerable effect on the properties of MoSe2 single crystal.
Keywords:single crystal, direct vapour transport (DVT) technique, structural, electrical and optical properties.
A.M. Vora
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