Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4), P. 412-416 (2018).

Ellipsometry of hybrid noble metal-dielectric nanostructures
A.L. Yampolskiy1, *, O.V. Makarenko1, L.V. Poperenko1, V.O. Lysiuk2

1,*Taras Shevchenko Kyiv National University, Department of Physics, 4, Hlushkova ave., 03022 Kyiv, Ukraine E-mail:
2V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. Angular ellipsometric measurements of thin Ag, Cu films covered by HfO 2 protective layer were performed. The ellipsometric parameters ψ and ∆ were measured in θ = 43°...85° light incidence angle range, where ψ is the azimuth of restored linear polarization, ∆ is the phase shift between p- and s-components of reflected light. For comparison, thin Au film (traditional sensor for surface plasmon resonance (SPR)) was examined as well. The curve ∆(θ) for all the samples investigated falls down with increasing angle of light incidence, while ψ(θ) changes relatively weakly. It has been ascertained that the increase in the thickness of HfO 2 layer affects the tan(ψ) value, while tan(ψ) deviation is mainly determined by the type of metallic film. With the growth of HfO 2 layer, the minimum position of tan(ψ) shifts to smaller angles. From these angular dependences, one could choose the appropriate SPR-compatible structure due to maximal deviation of tan(ψ). To optimize layer thickness for a high SPR-response, spectral measurements and additional calculations are required.

Keywords: ellipsometry, thin film, noble metals, surface plasmon resonance, hafnium oxide.

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