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Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 28 N2(2025)



Volume 28 (2025) Volume 27 (2024) Volume 26 (2023) Volume 25 (2022) Volume 24 (2021) Volume 23 (2020) Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 28 N 3
https://doi.org/10.15407/spqeo28.03

Editorial

Quantum Innovations and the SPQEO journal
P. Smertenko, Z. Maksimenko, A. Belyaev
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 254–257 (2025).
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Semiconductor physics

Dynamics of charge states at the surface of a ferroelectric nanoparticle in a liquid crystal
J.M. Gudenko, O.S. Pylypchuk, V.V. Vainberg, V.N. Poroshin, D.O. Stetsenko, I.A. Gvozdovskyy, O.V. Bereznykov, S.E. Ivanchenko, E.A. Eliseev, À.N. Morozovska
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 258–266 (2025).
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Physical-statistical principles of analysis of defect transformations in semiconductor structures under influence of magnetic and electromagnetic fields
G.V. Milenin, R.A. Redko
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 267–276 (2025).
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Potential barrier in a two-layer porous structure based on ZrO2 and Ca6H2O19Si6, depending on filling of the pores with electrolyte (H2O)
Yu.Yu. Bacherikov, O.B. Okhrimenko, A.Z. Sadygov, F.I. Ahmadov, A.G. Zhuk, Z.V. Maksimenko, V.V. Ponomarenko, I.A. Danilenko, À.I. Lyubchyk, S.I. Lyubchyk
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 277–283 (2025).
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Parameter determination of ion-implanted layers of single crystals by integrated dynamical diffractometry
G.I. Nyzkova, B.M. Romanyuk, O.V. Dubikovskyi, O.Yo. Gudymenko, O.A. Kulbachynskyi, A.O. Bilotska, T.P. Vladimirova, Ya.V. Vasylyk, O.S. Skakunova, I.I. Demchik, L.I. Makarenko, S.V. Lizunova, I.M. Zabolotny, V.V. Molodkin, O.S. Kononenko, V.V. Lizunov
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 284–291 (2025).
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Probing the photoelectrochemical performance of spray-coated Cu2CoSnS4 thin films on FTO substrate
P.S. Maldar, S.N. Pusawale, A.S. Tambat
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 292–299 (2025).
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Raman scattering and X-ray diffraction studies of Ge16Sb24Se60 alloys
H.K. Kochubei, A.V. Stronski, V.M. Dzhagan, K.V. Shportko, O. Selyshchev, P. Shamrovska, D.R.T. Zahn
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 300–305 (2025).
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Hetero- and low-dimensional structures

MXene-integrated two-dimensional photocatalysts: A new frontier in sustainable degradation of organic dyes
J.A. Buledi, S. Golovynskyi, V.M. Kravchenko, J. Qu, I. Golovynska, A.R. Solangi
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 306–314 (2025).
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Bilayer MoS2 phototransistor deposited on a flexible substrate
S.G. Petrosyan, A.M. Khachatryan, P.G. Petrosyan
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 315–321 (2025).
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Effect of biochar binding on dielectric properties of color catcher sheets
O.V. Kovalchuk, J. Prochazkova, T.M. Kovalchuk, L.V. Volokh, I.V. Oleinikova, J. Mariano, I. Safarik, P. Kopcansky
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 322–328 (2025).
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Optics

EPR evidence of paramagnetic to spin glass transition in Zn1-xMnxSe:Fe2+ single crystals
A.V. Uriadov, I.V. Ivanchenko, N.A. Popenko, B.E. Bekirov, E.N. Kalabukhova, V.M. Tkach, D.V. Savchenko
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 329–334 (2025).
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Implicit quiescent optical soliton perturbation with nonlinear chromatic dispersion and generalized temporal evolution having a plethora of self-phase modulation structures by Lie symmetry
A.R. Adem, A. Biswas & Y. Yildirim
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 335–345 (2025).
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Optical soliton perturbation with the concatenation model having multiplicative white noise by F-expansion
Y. Yildirim & A. Biswas
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 346–350 (2025).
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Optoelectronics and optoelectronic devices

Characterization and optimization features of high-efficiency silicon solar cells with dominating surface recombination
A.V. Sachenko, V.P. Kostylov, I.O. Sokolovsky, and A.I. Shkrebtii
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 351–359 (2025).
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The influence of temperature and current on the spectral and luminous characteristics of high-power LEDs
A.M. Minyaylo, D.V. Pekur, Yu.E. Nikolaenko, O.M. Kamuz
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 360–366 (2025).
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Sensors

Study of acoustic response of an object buried in sand with different water contents
L.V. Borkovska, V.P. Kyslyi, V.O. Morozhenko, Yu.G. Serozhkin, E.O. Soloviev, V.M. Nastych
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 367–373 (2025).
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Optimization of chromatic SPR sensor of gas environment based on registration of reflected beam color: Modeling and experiment
O.L. Kukla, Yu.M. Shirshov, A.I. Biletskiy, O.M. Fedchenko, O.S. Kondratenko
Semiconductor physics, quantum electronics and optoelectronics, 28 (3), P. 374–382 (2025).
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Information

For contributors to SPQEO
(PDF)

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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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