Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N2 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 22 N 2
https://doi.org/10.15407/spqeo22.02

Semiconductor Physics

Influence of inter-electron scattering on the form of non-equilibrium distribution function of band carriers
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 139-149 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Electronic and optical properties of β-HgS
J.O. Akinlami and F.C. Onyeanu
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 150-155 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Account of surface contribution to thermodynamic properties of lead selenide films
L.I. Nykyruy, B.P. Naidych, O.M. Voznyak, T.O. Parashchuk, R.V. Ilnytskyi
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 156-164 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Effect of ultrasound treatment on the electro-physical properties of the structure of Al-Al2O3-p-CdTe
A.K. Uteniazov, K.A. Ismailov
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 165-170 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Taking the Coulomb effects into account in the reactions of one-electron charge exchange
V.Yu. Lazur, V.V. Aleksiy, М.І. Karbovanets, M.V. Khoma, S.І. Myhalyna
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 171-181 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Preparation and electrical properties of composites based on (Cu6PS5I)1-x(Cu7PS6)x mixed crystals
V.Yu. Izai, M.M. Luchynets, I.P. Studenyak, A.I. Pogodin, O.P. Kokhan, M. Rajňák, M. Timko, P. Kopčanský
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 182-187 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure
I.B. Sapaev, B. Sapaev, D.B. Babajanov
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 188-192 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
Ya.Ya. Kudryk, V.S. Slipokurov
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 193-200 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Hetero- and Low-Dimensional Structures

Electrostatics of the nanowire radial p-i-n diode
V.L. Borblik
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 201-205 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon
V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M. Litvinchuk, V.V. Melnyk, I.V. Olhovik
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 206-214 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Optics

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography
O.M. Hreshchuk, V.O. Yukhymchuk, V.M. Dzhagan, V.A. Danko, V.I. Min’ko, I.Z. Indutnyi, P.Ye. Shepeliavyi, P.M. Lytvyn, E. Sheregii, S. Prokhorenko, J. Polit, D. Zak, D. Płoch, M.Ya. Valakh
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 215-223 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Features of third-order optical nonlinearity in carbon disulfide
L.V. Poperenko, S.G. Rozouvan
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 224-230 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Optoelectronics and optoelectronic devices

Luminescent analysis of the quality of CdS nanocrystals depending on technological parameters
A.B. Bogoslovskaya, D.O. Grynko, E.G. Bortchagovsky, O.I. Gudymenko
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 231-236 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling
V.V. Korotyeyev, Yu.M. Lyaschuk, V.A. Kochelap, L. Varani, D. Coquillat, S. Danylyuk, S. Brose, S.A. Vitusevich
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 237-251 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Use of the infrared thermography method to develop discharging rules for lithium polymer batteries
V.Yu. Larin, V.M. Ryzhykh, A.P. Shcherban, O.M. Markina, V.P. Maslov, N.V. Kachur
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 252-256 (2019).
 | Full text (PDF)  | Abstract (in Ukrainian)

Lectures, Presentations (for subscribers only)

Introduction to nanoelectronics and optoelectronics: Science, Nanotechnology, Engineering and application (lectures 3 and 4)
V.O. Kochelap
Semiconductor physics, quantum electronics and optoelectronics, 22 (2), P. 257-258 (2019).

Information

For contributors to SPQEO
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This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

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